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Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si 3 N 4 spacer etching

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https://halshs.archives-ouvertes.fr/halshs-02428534
Contributor : Erwine Pargon <>
Submitted on : Friday, November 6, 2020 - 5:29:00 PM
Last modification on : Tuesday, February 16, 2021 - 3:33:50 AM
Long-term archiving on: : Sunday, February 7, 2021 - 8:17:07 PM

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Vincent Renaud, Camille Petit-Etienne, Jean-Paul Barnes, Jérémie Bisserier, Olivier Joubert, et al.. Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si 3 N 4 spacer etching. Journal of Applied Physics, American Institute of Physics, 2019, 126 (24), pp.243301. ⟨10.1063/1.5131030⟩. ⟨halshs-02428534⟩

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